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Samsung, new record in DRAM production



Samsung, new record in DRAM production


Korea – Samsung today unveiled that it was the first to apply the 70 nanometer manufacturing process in the construction of DRAM chips.

According to the Korean manufacturer, this process is just the natural evolution of the currently used 80 and 90 nanometer processes.

However, according to the sources, chip-per-wafer productivity will be at least 100 percent higher than that achieved by the 90-nanometer technology.

The limit was overcome by using “Samsung’s Metal-Insulator-Metal technology, and a new 3D transistor architecture called” Sphere-shaped Recess Channel Array Transistor “.

These technologies have been applied to overcome current limits and to provide lower refresh times, essential in manufacturing 512Mbit chips.

Samsung thus reaches a new record, having first developed the 80 nanometer DRAM chip in 2003.

According to sources, the technology will be used by Samsung from the second half of 2006 for 512MB, 1GB and 2GB modules.

GF